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SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
2.5
V GS = 10 V
I D = 5 A
100
2.0
T J = 150 °C
1.5
10
1.0
T J = 25 °C
0.5
0.0
1
- 50
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T J - J u nction Temperat u re ( °C )
On-Resistance vs. Junction Temperature
THERMAL RATINGS
30
100
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
25
Limited b y R DS(on) *
10 μ s
100 μ s
20
15
10
10
1
1 ms
10 ms
100 ms
5
T C = 25 °C
Single P u lse
1 s, DC
0
0
25
50 75 100 125
150
175
0.1
0 . 1
1
1 0
100
1 0 0 0
2
1
0.1
T C - Case Temperat u re (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area
0.01
10 -4
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71768 .
www.vishay.com
4
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
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